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dg611e, DG612E, dg613e www.vishay.com vishay siliconix s17-0578-rev. a, 24-apr-17 1 document number: 78910 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 1.4 pc charge injection, 100 pa leakage, quad spst switches description the dg611e, DG612E, and dg613e contain four independently selectable spst switches. they offer improved performance over th e industry standard dg611 series. the dg611e and DG612E have all switches normally closed and normally open respectively, while the dg613e has 2 normally open and 2 normally closed switches. they are designed to operate from a 3 v to 12 v single supply or from 3 v to 5 v dual supplies and are fully specified at +3 v, +5 v and 5 v. all control logic inputs have guaranteed 2 v logic high limits when operating from +5 v or 5 v supplies and 1.4 v when operating from a +3 v supply. the dg611e, DG612E, and dg613e switches conduct equally well in both directions and offer rail to rail analog signal handling. 1.4 pc low charge injection, coupled with very low switch capacitance: 3 pf, fast switching speed: t on /t off 23 ns/14 ns and excellent 3 db bandwidth: 1 ghz, make these products ideal for precision instru mentation, high-end data acquisition, automated test equipment and high speed communication applications. operation temperature is specif ied from -40 c to +125 c. the dg611e, DG612E, and dg613e are available in 16 lead soic, tssop and the space saving 1.8 mm x 2.6 mm miniqfn packages. features ? low charge injection (1.4 pc typ.) ? leakage current < 0.25 na at 85 c ? low switch capacitance (c soff 3 pf typ.) ?low r ds(on) - 115 ? max. ? fully specified with single supply operation at 3 v, 5 v, and dual supplies at 5 v ? low voltage, 2.5 v cmos/ttl compatible ? 1 ghz, 3 db bandwidth ? excellent isolation perfo rmance (-59 db at 10 mhz) ? excellent crosstalk perfo rmance (-74 db at 10 mhz) ? fully specified from -40 c to +85 c and -40 c to +125 c ? 16 lead soic, tssop and miniqfn package (1.8 mm x 2.6 mm) ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications ? precision instrumentation ? medical instrumentation ? automated test equipment ? high speed communications applications ? high-end data acquisition ? sample and hold applications ? sample and hold systems functional block diagram and pin configuration truth table logic dg611e DG612E 0onoff 1offon dg611e soic/tssop top view s 2 v+ nc s 3 in 3 d 3 d 4 in 4 in 2 d 2 d 1 in 1 s 1 v- gnd s 4 1 2 3 4 5 6 8 7 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 top view in 1 in 2 d 1 d 2 s 1 s 2 v- v+ gnd nc s 4 s 3 d 4 d 3 in 4 in 3 dg611e miniqfn pin 1 device marking: txx for dg611e (miniqfn16) uxx for DG612E vxx for dg613e xx = date/lot traceability code txx
dg611e, DG612E, dg613e www.vishay.com vishay siliconix s17-0578-rev. a, 24-apr-17 2 document number: 78910 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 functional block diagram and pin configuration note a. -40 c to +85 c da tasheet limits apply truth table logic sw1, sw4 sw2, sw3 0offon 1onoff ordering information temp. range package part number -40 c to +125 c a 16-pin tssop dg611eeq-t1-ge4 DG612Eeq-t1-ge4 dg613eeq-t1-ge4 16-pin narrow soic dg611eey-t1-ge4 DG612Eey-t1-ge4 dg613eey-t1-ge4 16-pin miniqfn dg611een-t1-ge4 DG612Een-t1-ge4 dg613een-t1-ge4 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 to p v i ew in 1 in 2 d 1 d 2 s 1 s 2 + v - v c n d n g s 4 s 3 d 4 d 3 in 4 in 3 to p v i ew s 2 v+ nc s 3 in 3 d 3 d 4 in 4 in 2 d 2 d 1 in 1 s 1 v- gnd s 4 1 2 3 4 5 6 8 7 16 15 14 13 12 11 10 9 dg613e soic/tssop dg613e miniqfn pin 1 device marking: vxx for dg613e (miniqfn16) vxx
dg611e, DG612E, dg613e www.vishay.com vishay siliconix s17-0578-rev. a, 24-apr-17 3 document number: 78910 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. signals on sx, dx, or inx exceeding v+ or v- will be clamped by internal diodes. limit forward diode current to maximum curre nt ratings b. all leads welded or soldered to pc board c. derate 5.6 mw/c above 70 c d. derate 6.6 mw/c above 70 c e. derate 8 mw/c above 70 c f. manual soldering with iron is not recommended for leadless components. the miniqfn-16 is a leadless package. the end of the l ead terminal is exposed copper (not plated) as a result of the sing ulation process in manufacturing. a solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensu re adequate bottom side solder interconnection absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter limit unit v+ to v- 14 v gnd to v- 7 digital inputs a , v s , v d (v-) - 0.3 v to (v+) + 0.3 v or 30 ma, whichever occurs first continuous current (any terminal) 30 ma peak current, s or d (pulsed 1 ms, 10 % duty cycle) 100 storage temperature -65 to +150 c power dissipati on (package) b 16-pin tssop c 450 mw 16-pin miniqfn d 525 16-pin narrow soic e 640 thermal resistance (package) b 16-pin tssop 178 c/w 16-pin miniqfn 152 16-pin narrow soic 125 esd / hbm eia / jesd22-a114-a 2k v esd / cdm eia / jesd22-c101-a 1k latch up jesd78 300 ma
dg611e, DG612E, dg613e www.vishay.com vishay siliconix s17-0578-rev. a, 24-apr-17 4 document number: 78910 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 specifications for dual supplies (v+ = +5 v, v- = -5 v) parameter symbol test conditions unless otherwise specified v + = +5 v, v - = - 5 v v in = 2 v, 0.8 v a temp. b limits unit typ. c -40 c to +125 c -40 c to +85 c min. d max. d min. d max. d analog switch analog signal range e v analog full - - 5 5 - 5 5 v drain-source on-resistance r ds(on) i s = 1 ma, v d = -3 v, 0 v, +3 v room 72 - 115 - 115 ? full - - 160 - 140 on-resistance match ? r ds(on) i s = 1 ma, v d = 3 v room 0.6 - 2.5 - 2.5 full - - 5 - 4.5 on-resistance flatness r flat(on) i s = 1 ma, v d = -3 v, 0 v, +3 v room 15 - 20 - 20 full - - 30 - 25 switch off leakage current i s(off) v+ = 5.5 v, v- = -5.5 v v d = +4.5 v / -4.5 v v s = -4.5 v / +4.5 v room 0.0005 -0.1 0.1 -0.1 0.1 na full - -2 2 -0.25 0.25 i d(off) room 0.006 -0.1 0.1 -0.1 0.1 full - -2 2 -0.25 0.25 switch on leakage current i d(on) v+ = 5.5 v, v- = -5.5 v v d = v s = 4.5 v room 0.008 -0.1 0.1 -0.1 0.1 full - -6 6 -0.25 0.25 digital control input current, v in low i il v in under test = 0.8 v full 0.01 -0.1 0.1 -0.1 0.1 a input current, v in high i ih v in under test = 2 v full 0.01 -0.1 0.1 -0.1 0.1 input capacitance e c in f = 1 mhz room 3 - - - - pf dynamic characteristics turn-on time t on r l = 300 ? , c l = 35 pf v s = 3 v room 23 - 50 - 50 ns full - - 75 - 60 turn-off time t off room 14 - 35 - 35 full - - 50 - 45 break-before-make time delay t bbm dg613e only, v s = 3 v r l = 300 ? , c l = 35 pf room 15 - - - - full - 2 - 2 - charge injection e q inj v g = 0 v, r g = 0 ? , c l = 1 nf room 1.4 - - - - pc off isolation e oirr r l = 50 ? , c l = 5 pf f = 10 mhz room -59 - - - - db channel-to-channel crosstalk e x talk room -74 - - - - bandwidth e bw r l = 50 ? , c l = 5 pf room 1 - - - - ghz source off capacitance e c s(off) f = 1 mhz; v s = 0 v room 3 - - - - pf drain off capacitance e c d(off) room 3 - - - - drain on capacitance e c d(on) f = 1 mhz; v s = v d = 0 v room 7 - - - - total harmonic distortion e thd signal = 1 v rms , 20 hz to 20 khz, r l = 600 ? room 0.13 - - - - % power supplies power supply current i+ v+ = +5 v, v- = -5 v v in = 0 v or 5 v room 0.001 - 0.1 - 0.1 a full - - 1 - 1 negative supply current i- room -0.001 -0.1 - -0.1 - full - -1 - -1 - ground current i gnd room -0.001 -0.1 - -0.1 - full - -1 - -1 -
dg611e, DG612E, dg613e www.vishay.com vishay siliconix s17-0578-rev. a, 24-apr-17 5 document number: 78910 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 specifications for single supplies (v+ = +5 v, v- = 0 v) parameter symbol test conditions unless otherwise specified v+ = +5 v, v- = 0 v v in = 2 v, 0.8 v a temp. b limits unit typ.c -40 c to +125 c -40 c to +85 c min. d max. d min. d max. d analog switch analog signal range e v analog full - 0 5 0 5 v drain-source on-resistance r ds(on) v+ = 5 v, v- = 0 v i s = 1 ma, v d = +3.5 v room 130 - 170 - 170 ? full - - 235 - 215 on-resistance match ? r ds(on) v+ = 5 v, v- = 0 v, i s = 1 ma, v d = 3.5 v room 0.6 - 5 - 5 full - - 12 - 10 on-resistance flatness r flat(on) v+ = 5 v, v- = 0 v, i s = 1 ma, v d = 0 v, 3.5 v room 29 - 50 - 50 full - - 100 - 90 switch off leakage current i s(off) v+ = 5.5 v, v- = 0 v v d = 4.5 v / 1 v v s = 1 v / 4.5 v room 0.0005 -0.1 0.1 -0.1 0.1 na full - -2 2 -0.25 0.25 i d(off) room 0.006 -0.1 0.1 -0.1 0.1 full - -2 2 -0.25 0.25 switch on leakage current i d(on) v+ = 5.5 v, v- = 0 v v d = v s = 1 v / 4.5 v room 0.008 -0.1 0.1 -0.1 0.1 full - -6 6 -0.25 0.25 digital control input current, v in low i il v in under test = 0.8 v full 0.01 -0.1 0.1 -0.1 0.1 a input current, v in high i ih v in under test = 2 v full 0.01 -0.1 0.1 -0.1 0.1 input capacitance e c in f = 1 mhz room 4 - - - - pf dynamic characteristics turn-on time e t on r l = 300 ? , c l = 35 pf v s = 3 v room 33 - 60 - 60 ns full - - 90 - 80 turn-off time e t off room 14 - 35 - 35 full - - 45 - 40 break-before-make time delay e t bbm dg613e only, v s = 3 v r l = 300 ? , c l = 35 pf room 19 - - - - full - 2 - 2 - charge injection e q inj v g = 0 v, r g = 0 ? , c l = 1 nf full 1.5 - - - - pc off isolation e oirr r l = 50 ? , c l = 5 pf f = 10 mhz room -59 - - - - db channel-to-channel crosstalk e x talk room -70 - - - - bandwidth e bw r l = 50 ? , c l = 5 pf room 880 - - - - mhz source off capacitance e c s(off) f = 1 mhz; v s = 0 v room 3 - - - - pf drain off capacitance e c d(off) room 3 - - - - drain on capacitance e c d(on) f = 1 mhz; v s = v d = 0 v room 7 - - - - power supplies power supply current i+ v in = 0 v or 5 v room 0.001 - 0.1 - 0.1 a full - - 1 - 1 negative supply current i- room -0.001 -0.1 - -0.1 - full - -1 - -1 - ground current i gnd room -0.001 -0.1 - -0.1 - full - -1 - -1 -
dg611e, DG612E, dg613e www.vishay.com vishay siliconix s17-0578-rev. a, 24-apr-17 6 document number: 78910 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. v in = input voltage to pe rform proper function b. room = 25 c, full = as determined by the operating temperature suffix c. typical values are for design aid only, not guaranteed nor subject to production testing d. the algebraic convention whereby the most negative value is a mi nimum and the most positive a ma ximum, is used in this datash eet e. guaranteed by design, not subject to pr oduction test stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications for single supplies (v+ = +3 v, v- = 0 v) parameter symbol test conditions unless otherwise specified v + = +3 v, v - = - 0 v v in = 1.4 v, 0.6 v a temp. b limits unit typ. c -40 c to +125 c -40 c to +85 c min. d max. d min. d max. d analog switch analog signal range e v analog full - 0 3 0 3 v drain source on-resistance r ds(on) i s = 1 ma, v d = +1.5 v room 305 - 420 - 420 ? full - - 600 - 500 switch off leakage current i s(off) v+ = 3.3 v, v- = 0 v v d = 3 v / 0.3 v v s = 0.3 v / 3 v room 0.0005 -0.1 0.1 -0.1 0.1 na full - -2 2 -0.25 0.25 i d(off) room 0.006 -0.1 0.1 -0.1 0.1 full - -2 2 -0.25 0.25 switch on leakage current i d(on) v+ = 3.3 v, v- = 0 v v d = v s = 0.3 v / 3 v room 0.008 -0.1 0.1 -0.1 0.1 full - -6 6 -0.25 0.25 digital control input current, v in low i il v in under test = 0.6 v full 0.01 -0.1 0.1 -0.1 0.1 a input current, v in high i ih v in under test = 1.4 v full 0.01 -0.1 0.1 -0.1 0.1 input capacitance e c in f = 1 mhz room 4 - - - - pf dynamic characteristics turn-on time t on r l = 300 ? , c l = 35 pf v s = 2 v room 76 - 115 - 115 ns full - - 180 - 155 turn-off time t off room 31 - 58 - 58 full - - 65 - 60 break-before-make time delay t bbm dg613 only, v s = 2 v r l = 300 ? , c l = 35 pf room 60 - - - - full - 10 - 10 - charge injection e q inj v g = 0 v, r g = 0 ? , c l = 1 nf room 1.4 - - - - pc off isolation e oirr r l = 50 ? , c l = 5 pf f = 10 mhz room -59 - - - - db channel-to-channel crosstalk e x talk room -71 - - - - bandwidth e bw r l = 50 ? , c l = 5 pf room 830 - - - - mhz source off capacitance e c s(off) f = 1 mhz; v s = 0 v room 3 - - - - pf drain off capacitance e c d(off) room 4 - - - - drain on capacitance e c d(on) f = 1 mhz; v s = v d = 0 v room 7 - - - - power supplies power supply current i+ v in = 0 v or 3 v room 0.001 - 0.1 - 0.1 a full - - 1 - 1 negative supply current i- room -0.001 -0.1 - -0.1 - full - -1 - -1 - ground current i gnd room -0.001 -0.1 - -0.1 - full - -1 - -1 -
dg611e, DG612E, dg613e www.vishay.com vishay siliconix s17-0578-rev. a, 24-apr-17 7 document number: 78910 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) on-resistance vs. v d (dual supply) on-resistance vs. temperature (dual supply) on-resistance vs. temperature (single supply) on-resistance vs. v d (single supply) on-resistance vs. temperature (single supply) charge injection vs. analog voltage 10 100 1000 10000 20 30 40 50 60 70 80 90 100 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 axis title 1st line 2nd line 2nd line r on - on-resistance ( ) v d - analog voltage (v) 2nd line v = 3 v v = 5 v i s = 1 ma 10 100 1000 10000 20 30 40 50 60 70 80 90 100 110 120 130 140 150 -5-4-3-2-1012345 axis title 1st line 2nd line 2nd line r on - on-resistance ( ) v d - analog voltage (v) 2nd line +125 c +85 c +25 c -40 c v = 5 v i s = 1 ma 10 100 1000 10000 100 120 140 160 180 200 220 240 260 280 300 320 340 360 380 400 0123 axis title 1st line 2nd line 2nd line r on - on-resistance () v d - analog voltage (v) 2nd line +125 c +85 c +25 c -40 c v + = + 3 v i s = 1 ma 10 100 1000 10000 0 50 100 150 200 250 300 350 400 01234567891011121314 axis title 1st line 2nd line 2nd line r on - on-resistance ( ) v d - analog voltage (v) 2nd line v+ = +3 v v+ = +5 v v+ = +13.2 v i s = 1 ma 10 100 1000 10000 50 70 90 110 130 150 170 190 210 230 250 012345 axis title 1st line 2nd line 2nd line r on - on-resistance ( ) v d - analog voltage (v) 2nd line +125 c +85 c +25 c -40 c v + = + 5 v i s = 1 ma 10 100 1000 10000 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -6-5-4-3-2-10123456 axis title 1st line 2nd line 2nd line q inj - charge injection (pc) v s - analog voltage (v) 2nd line v = 5 v v+ = +5 v v+ = +3 v c l =1 nf
dg611e, DG612E, dg613e www.vishay.com vishay siliconix s17-0578-rev. a, 24-apr-17 8 document number: 78910 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) leakage current vs. temperature leakage current vs. temperature supply current vs. temperature leakage current vs. temperature switching time vs. temperature supply current vs. temperature 10 100 1000 10000 -500 -400 -300 -200 -100 0 100 200 300 400 500 -40-20 0 20406080100120 axis title 1st line 2nd line 2nd line leakage current (pa) temperature (c) 2nd line i d(off) ,v d = 3 v, v s = 0.3 v i d(on) ,v d = 3 v i s(off) ,v d = 0.3 v, v s = 3 v i s(off) ,v d = 3 v, v s = 0.3 v i d(on) ,v d = 0.3 v i d(off) ,v d = 0.3 v, v s = 3 v v+ = +3.3 v 10 100 1000 10000 -500 -400 -300 -200 -100 0 100 200 300 400 500 -40-20 0 20406080100120 axis title 1st line 2nd line 2nd line leakage current (pa) temperature (c) 2nd line i d(off) ,v d = 4.5 v, v s = 1 v i d(on) ,v d = 4.5 v i s(off) ,v d = 1 v, v s = 4.5 v i s(off) ,v d = 4.5 v, v s = 1 v i d(on) ,v d = 1 v i d(off) ,v d = 1 v, v s = 4.5 v v+ = +5.5 v 10 100 1000 10000 0 50 100 150 200 250 300 350 -40-20 0 20406080100120140 axis title 1st line 2nd line 2nd line i+ - supply current (na) temperature (c) 2nd line v+ = +5 v v in = v+ or gnd 10 100 1000 10000 -700 -500 -300 -100 100 300 500 700 -40-20 0 20406080100120 axis title 1st line 2nd line 2nd line leakage current (pa) temperature (c) 2nd line i d(off) ,v d = 4.5 v, v s =-4.5 v i d(on) ,v d = 4.5 v i s(off) ,v d = -4.5 v, v s = 4.5 v i s(off) ,v d = 4.5 v, v s =-4.5 v i d(on) ,v d =-4.5 v i d(off) ,v d = -4.5 v, v s = 4.5 v v = 5.5 v 10 100 1000 10000 0 20 40 60 80 -50 0 50 100 150 axis title 1st line 2nd line 2nd line t on(in) , t off(in) - switching time (ns) temperature (c) 2nd line v = 5 v, t on v = 5 v, t off v+ = +5 v, t on v+ = +5 v, t off 10 100 1000 10000 60 70 80 90 100 -40-20 0 20406080100120140 axis title 1st line 2nd line 2nd line i+ - supply current (a) temperature (c) 2nd line v+ = +5 v v in = 2.5 v
dg611e, DG612E, dg613e www.vishay.com vishay siliconix s17-0578-rev. a, 24-apr-17 9 document number: 78910 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) supply current vs. switching frequency supply current vs. switching frequency switching threshold vs. supply voltage (single supply) supply current vs. input voltage insertion loss, off-isolatio n, crosstalk vs. frequency switching threshold vs. supply voltage (dual supply) 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10 100 1000 10k 100k 1m 10m axis title 1st line 2nd line 2nd line i+ - supply current ( a) input switching frequency (hz) 2nd line v+ = +3 v v+ = +5 v 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10 000 10 1000 100k 10m axis title 1st line 2nd line 2nd line i+ , i-, i gnd - supply current (a) input switching frequency (hz) 2nd line v+ = +5 v v- = -5 v i+ i- i gnd 10 100 1000 10000 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 234567891011121314 axis title 1st line 2nd line 2nd line v in - switching threshold (v) v+ - supply voltage (v), single supply 2nd line -40 ? cv inh 125 ? cv inl 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10 000 100 000 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 axis title 1st line 2nd line 2nd line i+ - supply current (a) v in (v) 2nd line v+ = 3 v v+ = 5 v 10 100 1000 10000 -140 -130 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 10 100k 1m 10m 100m 1g axis title 1st line 2nd line 2nd line loss, oirr, x talk (db) frequency (hz) 2nd line oirr v = 5 v loss x talk 10 100 1000 10000 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 234567 axis title 1st line 2nd line 2nd line v in - switching threshold (v) v - supply voltage (v), dual supply 2nd line -40 cv inh 125 cv inl
dg611e, DG612E, dg613e www.vishay.com vishay siliconix s17-0578-rev. a, 24-apr-17 10 document number: 78910 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 test circuits fig. 1 - switching time fig. 2 - break-before-make (dg613e) fig. 3 - charge injection 0 v logic input s w itch input* 3 v 50 % 0 v v s t r < 5 ns t f < 5 ns 90 % t off t o n v o n ote: logic input w a v eform is in v erted for s w itches that ha v e the opposite logic sense control c l (includes fixture and stray capacitance) v + i n r l r l + r ds(on) v o = v s s d - 5 v v o g n d c l 35 pf v - r l 300 + 5 v 90 % v s 0 v logic input s w itch s w itch output 3 v 50 % 0 v output 0 v 90 % v o2 v o1 90 % v s1 v s2 t d t d v o2 c l (includes fixture and stray capacitance) v + s 2 v - s 1 v s2 i n 2 d 2 v s1 r l2 300 d 1 v o1 c l2 35 pf -5 v g n d + 5 v r l1 300 c l1 35 pf i n 1 c l 1 nf d r g v o v + s v - 3 v i n v g - 5 v g n d + 5 v off o n off off o n off v o v o i n x i n x q = v o x c l
dg611e, DG612E, dg613e www.vishay.com vishay siliconix s17-0578-rev. a, 24-apr-17 11 document number: 78910 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 test circuits fig. 4 - crosstalk fig. 5 - off-isolation fig. 6 - source / drain capacitances vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package / ta pe drawings, part marking, and reliability data, see www.vishay.com/ppg?78910 . 0 v , 2.4 v s 1 x talk isolation = 20 log v o v s d 2 c = rf b ypass r l d 1 s 2 v s 0 v , 2.4 v i n 1 50 v o i n 2 r g = 50 v + - 5 v g n d v - n c c + 5 v c r l 50 d 0 v , 2.4 v v + r g = 50 - 5 v g n d v - c v s off isolation = 20 log v o v s i n v o + 5 v s c c = rf bypass d i n s v + -5 v g n d v - c 0 v , 2.4 v meter hp4192a impedance analyzer or equi v alent + 5 v c
package information www.vishay.com vishay siliconix revision: 09-may-16 1 document number: 64694 for technical questions, contact: analogswitchtechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thin miniqfn16 case outline notes (1) use millimeters as the primary measurement. (2) dimensioning and to lerances conform to asme y14.5m. - 1994. (3) n is the number of terminal s. nd and ne is the number of terminals in each d and e site respectively. (4) dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip. (5) the pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body. (6) package warpage max. 0.05 mm. dimensions millimeters (1) inches min. nom. max. min. nom. max. a 0.50 0.55 0.60 0.020 0.022 0.024 a1 0 - 0.05 0 - 0.002 a3 0.15 ref. 0.006 ref. b 0.15 0.20 0.25 0.006 0.008 0.010 d 2.50 2.60 2.70 0.098 0.102 0.106 e 0.40 bsc 0.016 bsc e1.70 1.80 1.90 0.067 0.071 0.075 l 0.35 0.40 0.45 0.014 0.016 0.018 l1 0.45 0.50 0.55 0.018 0.020 0.022 n (3) 16 16 nd (3) 44 ne (3) 44 ecn: t16-0226-rev. b, 09-may-16 ? dwg: 6023 0.10 c 0.10 a a3 c 0.10 c 0.10 c s ide view top view bottom view c a b 13 12 11 10 d e 9 8 7 6 5 8 7 6 5 13 14 15 16 l1 1234 pin #1 identifier (5) s eating plane terminal tip (4) 16 x b 0.10 0.05 c c m m ab 12 11 10 9 4 15 x l 321 e 14 15 16
all leads 0.101 mm 0.004 in e h c d e b a1 l 4 3 12 8 7 56 13 14 16 15 9 10 12 11 package information vishay siliconix document number: 71194 02-jul-01 www.vishay.com 1
jedec part number: ms-012 dim min max min max a 1.35 1.75 0.053 0.069 a 1 0.10 0.20 0.004 0.008 b 0.38 0.51 0.015 0.020 c 0.18 0.23 0.007 0.009 d 9.80 10.00 0.385 0.393 e 3.80 4.00 0.149 0.157 e 1.27 bsc 0.050 bsc h 5.80 6.20 0.228 0.244 l 0.50 0.93 0.020 0.037 0 8 0 8 ecn: s-03946?rev. f, 09-jul-01 dwg: 5300
vishay siliconix package information document number: 74417 23-oct-06 www.vishay.com 1 symbols dimensions in millimeters min nom max a - 1.10 1.20 a1 0.05 0.10 0.15 a2 - 1.00 1.05 b 0.22 0.28 0.38 c - 0.127 - d 4.90 5.00 5.10 e 6.10 6.40 6.70 e1 4.30 4.40 4.50 e-0.65- l 0.50 0.60 0.70 l1 0.90 1.00 1.10 y--0.10 1036 ecn: s-61920-rev. d, 23-oct-06 dwg: 5624 tssop: 16-lead
pad pattern www.vishay.com vishay siliconix revision: 02-sep-11 1 document number: 63550 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 recommended minimum pad for tssop-16 0.281 (7.15) recommended minimum pads dimensions in inches (mm) 0.171 (4.35) 0.055 (1.40) 0.012 (0.30) 0.026 (0.65) 0.014 (0.35) 0.193 (4.90)
document number: 66557 www.vishay.com revision: 05-mar-10 1 pad pattern vishay siliconix recommended minimum pads for mini qfn 16l 1 0.400 (0.0157) 0.225 (0.0089) 0.463 (0.0182) 0.562 (0.0221) 2.900 (0.1142) 1.200 (0.0472) 2.100 (0.0827) mounting footprint dimen s ion s in mm (inch)
application note 826 vishay siliconix www.vishay.com document number: 72608 24 revision: 21-jan-08 application note recommended minimum pads for so-16 recommended minimum pads for so-16 0.246 (6.248) recommended mi nimum pads dimensions in inches/(mm) 0.152 (3.861) 0.047 (1.194) 0.028 (0.711) 0.050 (1.270) 0.022 (0.559) 0.372 (9.449) return to index return to index
legal disclaimer notice www.vishay.com vishay revision: 08-feb-17 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners. ? 2017 vishay intertechnology, inc. all rights reserved

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